SEMICONDUCTOR, MOLECULAR CRYSTALS AND OXIDE TEMPERATURE PRESSURE OPHASE DIAGRAM
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-03-30 |
| Journal | International Journal of Heat and Technology |
| Authors | S. ZHANG, L. Chen |
| Institutions | Jilin Jianzhu University |
Abstract
Section titled āAbstractāThe melting temperature-pressure phase diagram [Tm(P)-P] for semiconductor, molecular crystals and oxide are predicted through the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure.Semiconductor, molecular crystals and oxide have been employed to test the reliability of the model, because of its important role.For Si and Ge, the stable state under normal pressure is the diamond structure (Si-I and Ge-I).Through pressure, this change in the diamond structure for beta -Sn structure (Si-II and Ge-II), and with the increase of temperature, phase I and II are going to be melting into a liquid (L).For the CO2 crystal (commonly known as dry ice), it is a molecular solid with a structure of Pa3 at low temperature and low pressure (CO2-I), and can be widely used for cooling.Al2O3 has been extensively investigated because of its widely ranging industrial applications.This includes applications as a refractory material both of high hardness and stability up to high temperatures, as a support matrix in catalysis.MgO is a material of key importance to earth sciences and solid-state physics: it is one of the most abundant minerals in the Earth and a prototype material for a large group of ionic oxides.