ZnO Electrodeposition on Boron-Doped Diamond - Effects of Zinc Precursor Concentration
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2015-04-13 |
| Journal | ECS Transactions |
| Authors | P. Gautier, Anne Vallée, Arnaud Etcheberry, Nathalie Simon |
| Institutions | Institut Lavoisier de Versailles |
Abstract
Section titled âAbstractâThe cathodic electrodeposition of zinc oxide has been widely studied on various substrates in the last decades. The boron doped diamond (BDD) is a non conventional wide band gap semiconductor, which offers new possibilities as a substrate for this electrochemical deposition. Thus, in the present work, we study the deposition process performed with zinc chloride and dissolved oxygen as a precursor. The effect of zinc precursor concentration in a range of 0.2 to 5 mM is tested at 60°C. The current transient curves coupled with X-Ray Diffraction and Scanning Electron Microscopy analysis, reveal the effect of this parameter on the morphology of obtained ZnO/BDD deposits. Interestingly, the formation of ZnO pyramids was highlighted for the first time.