Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-06-08 |
| Journal | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Authors | V.S. Slipokurov |
Abstract
Section titled āAbstractāProposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 OhmācmĀ² when Rs = 3ā10ā· Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- **** - Nemanich, Interface reactions of titanium on single crystal and thin film diamond analyzed by UV photoemission spectroscopy. Applications of diamond films and related materials