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6CCVD Research

RECENT PROGRESS OF DIAMOND DEVICE TOWARD POWER APPLICATION

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2015-08-26
AuthorsJulien Pernot, Kazuhiro Ikeda, Alexandre Fiori, Aboulaye Traoré, N Tatsumi
InstitutionsConductive Composites (United States)
Citations2

Abstract

Section titled “Abstract”

The state of the art of the Institut NĂ©el research activity in the field of diamond power devices will be described and discussed. The active layers of the device are based on boron-doped monocristalline (100) diamond (with doping level varying between 1014 to 1021 cm-3) grown on Ib high temperature high pressure (HPHT) diamond substrate. The progresses done on diamond/metal interface, diamond/dielectric interface, or sharp gradient doping, permit recently the fabrication of original structures and devices, which will be detailed here (Schottky diode, boron doped ÎŽ-FET and MOS capacitance).

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

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