The world's first high voltage GaN-on-diamond power devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-09-01 |
| Authors | Turar Baltynov, Vineet Unni, E.M. Sankara Narayanan |
| Institutions | University of Sheffield |
| Citations | 3 |
Abstract
Section titled āAbstractāThis paper reports the fabrication method and electrical characterization results of the first-ever demonstrated high voltage AlGaN/GaN HEMTs on CVD diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 Ī¼m and source field plate length of 3 Ī¼m show an off-state breakdown voltage of ~ 1100V. Temperature characterization of Capacitance voltage characteristics provides insight on the temperature dependence of V <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>TH</sub> and 2DEG sheet carrier concentration in the fabricated devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - Recent progress in GaN-on-diamond device technology
- 2014 - Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates
- 2013 - Effects of deep trapping states at high temperatures on transient performance of AlGaN/GaN heterostructure field-effect transistors [Crossref]
- 2013 - Thermal Analysis of AlGaN/GaN HEMT: Measurement and Analytical Modeling Techniques
- 2013 - Capacitance Voltage Characteristics and Electron Holography on Cubic AlGaN/GaN Heterojunctions [Crossref]