Single-crystal GaN/AlN layers on CVD diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-10-01 |
| Journal | Technical Physics Letters |
| Authors | O. I. Khrykin, Yu. N. Drozdov, Š. Š. ŠŃŠ¾Š·Š“Š¾Š², P. A. Yunin, V. I. Shashkin |
| Institutions | Institute for Physics of Microstructures, Institute of Applied Physics |
Abstract
Section titled āAbstractāOriginal approach to fabricating a GaN/AlN/nanocrystalline diamond structure has been suggested and implemented. The stages of deposition of a structure of this kind include the following: (a) growth of nanocrystalline CVD-diamond on single-crystal AlN (preliminarily grown on a silicon substrate), (b) etch removal of the silicon substrate, and (c) growth of single-crystal GaN on the surface of single-crystal AlN. Single-crystal gallium nitride with a width of the X-ray rocking curve for the (0002) reflection of 0.35Ā° was obtained on a nanocrystalline-diamond substrate.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2011 - Microwave Devices Based on Wide-Bandgap Semiconductors