Simulations of diamond heat spreader for the thermal management of GaN HEMT
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2016-01-01 |
| Authors | Shirui Pu, Wenbo Luo, Yao Shuai, Chuangui Wu, Wanli Zhang |
| Institutions | National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices |
| Citations | 1 |
Abstract
Section titled âAbstractâA diamond heat spreader has been combined with Si microchannel for the improvement of the hotspots cooling capability for GaN high power electronic devices.The effects of the diamond heat spreader and Si die have been simulated using steady model by finite element analysis.It was found that the diamond spreader can reduce the maximal temperature of GaN device.The effect of thickness of Si die on maximum gate temperature will be increases linearly with the increase of total power.These methodology shows promising way to cool AlGaN/GaN HEMTs on Si.