Dynamics of the Formation of the Nitrogen-Vacancy Center in Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-02-01 |
| Journal | Communications in Computational Physics |
| Authors | Amihai Silverman, Joan Adler, R. Kalish |
| Institutions | Technion ā Israel Institute of Technology |
| Citations | 7 |
Abstract
Section titled āAbstractāAbstract We present results of simulations of the energetics and dynamics involved in the realization of the NV (nitrogen-vacancy) center in diamond. We use the self-consistent charge-density functional tight-binding approximation and show that when the nitrogen resides on a single substitutional site, it fails to attract a vacancy, hence no NV center can be formed. However, if it occupies a split interstitial site and two vacancies reside on the second or third neighbor sites, an NV center will form following annealing at temperatures as low as 300°C and 650°C, respectively. These results provide guidelines to experimentalists on how to increase the efficiency of NV formation in diamond.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - Ion implantation in diamond for quantum information processing: doping and damaging