Peculiarities of high electric field conduction in p-type diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-04-11 |
| Journal | Applied Physics Letters |
| Authors | V. Mortet, David TrĆ©mouilles, J. BulıĢÅ, Pavel HubıĢk, LudÄk Heller |
| Institutions | Czech Academy of Sciences, Institute of Physics, Centre National de la Recherche Scientifique |
| Citations | 7 |
Abstract
Section titled āAbstractāThe electrical properties of chemical vapour deposited p-type epitaxial diamond layers are studied in high electric field conditions. The quasi-static current-voltage characteristics have been measured using transmission-line pulse method with 100 ns pulses. Reproducible impurity impact ionization avalanche breakdown occurs at a critical electrical field in the range of 100-200 kV cmā1 depending on the acceptor concentration and temperature, leading to complete ionisation of neutral impurities. The current-voltage characteristics exhibit an S-shape with the bi-stable conduction characteristic of impurity impact ionisation.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1995 - Diamond: Electronic Properties and Applications [Crossref]