Challenges associated with diamond wire sawing when generating reduced thickness mono-crystalline silicon wafers
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-06-01 |
| Authors | Joseph Walters, Kirsten Sunder, O. Anspach, Paul Brooker, Hubert Seigneur |
| Institutions | University of Central Florida, PV Crystalox Solar (Germany) |
| Citations | 6 |
Abstract
Section titled āAbstractāBeing able to saw and process thinner wafers would allow in principle for further cost reductions in the PV industry if kerf losses can be further reduced and current yield associated with handling and processing of standard thickness wafer can be preserved. In order to enable handling and processing of thinner wafers with high yield, wafer specifications will need to scale appropriately in addition to reducing the thermal and mechanical load experienced during cell and module fabrication. In this work, we identify challenges of sawing thinner wafers down to 100 μm using diamond wire. We also report the characterization of the `as-cutā wafers via TTV, bow, surface roughness, reflectance, and the presence of cracks for the different wafer thicknesses.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2013 - Prediction of wire wear, wire bow, and wafer total thickness variation in diamond wire wafering process
- 2015 - Origin of periodic structures on silicon wafers sawn with diamond wire
- 2011 - Advanced production challenges for automated ultra-thin wafer handling
- 2006 - Mechanical Strength of Silicon Wafers Depending on Wafer Thickness and Surface Treatment