Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-07-01 |
| Journal | White Rose Research Online (University of Leeds, The University of Sheffield, University of York) |
| Authors | L. Poley, A. Blue, R. L. Bates, I. Bloch, Sergio CaƱas DĆez |
| Institutions | University of Liverpool, Consejo Superior de Investigaciones CientĆficas |
| Citations | 3 |
Abstract
Section titled āAbstractāThe planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise \nthe physics potential through a sizable increase in the luminosity up to 6 Ā· 1034 cmā2 \ns \nā1 \n. A \nconsequence of this increased luminosity is the expected radiation damage at 3000 fbā1 \nafter ten \nyears of operation, requiring the tracking detectors to withstand fluences to over 1 Ā· 1016 1 MeV \nneq/cm2 \n. In order to cope with the consequent increased readout rates, a complete re-design of the \ncurrent ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at \nthe Diamond Light Source with a 3 µm FWHM 15 keV micro focused X-ray beam. The devices \nunder test were a 320 µm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded \nto a 130 nm CMOS binary readout chip (ABC130) and a 320 µm thick full size radial (end-cap) \nstrip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips \n(ABCN-25). \nA resolution better than the inter strip pitch of the 74.5 µm strips was achieved for both detectors. \nThe effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond \npad regions. \nInter strip charge collection measurements indicate that the effective width of the strip on the \nsilicon sensors is determined by p-stop regions between the strips rather than the strip pitch. \n
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal Sourceā- DOI: None