Effect of n‐ and p‐type doping concentrations and compensation on the electrical properties of semiconducting diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-07-29 |
| Journal | physica status solidi (a) |
| Authors | Aboulaye Traoré, Satoshi Koizumi, Julien Pernot |
| Institutions | Centre National de la Recherche Scientifique, Institut Néel |
| Citations | 22 |
Abstract
Section titled “Abstract”Abstract We report an exhaustive description of electrical properties of mono‐crystalline diamond epilayers doped with boron and phosphorus impurities. Carrier density, carrier mobility, and resistivity have been calculated for boron and phosphorus doped diamond as a function doping level and a compensation for values ranging between 10 and 10 at two different temperatures of 300 and 500 K. The calculated values are graphically compared with experimental data from the literature and discussed in terms of device performances. Finally, an example of use of the graphics is given by comparing the IV characteristics of the first pn diamond junction with our calculations. Theoretical hole mobility as function of acceptor concentration and compensation at 300 and 500 K. The symbols are experimental data from references given in the text.