Suppression of the self-heating effect in AlGaN/GaN high electron mobility transistor by diamond heat sink layers
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-10-01 |
| Authors | V. Volchek, Dao Dinh Ha, V. R. Stempitsky, Tran Tuan Trung |
| Institutions | Le Quy Don Technical University, Belarusian State University of Informatics and Radioelectronics |
| Citations | 2 |
Abstract
Section titled āAbstractāThe influence of diamond heat sink layers on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulation in Wachutkaās thermodynamically rigorous model of lattice heating. It is shown that the diamond layers can significantly decrease device temperature, thus improving its current-voltage characteristics. Parameters of the diamond heat sink were optimized for the HEMTs on sapphire and silicon substrates.