Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-12-01 |
| Journal | Semiconductors |
| Authors | Е. А. Суровегина, Е. В. Демидов, М. Н. Дроздов, A. V. Murel, O. I. Khrykin |
| Institutions | Institute for Physics of Microstructures, Institute of Applied Physics |
| Citations | 4 |
Abstract
Section titled “Abstract”The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 1017 to ~1020 at cm-3 and of δ doping to the surface concentration (0.3-5) × 1013 at cm-3 are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 1996 - Delta-Doping of Semiconductors