Nanometric diamond delta doping with boron
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-12-07 |
| Journal | physica status solidi (RRL) - Rapid Research Letters |
| Authors | J. E. Butler, A. L. Vikharev, Š. Š. ŠŠ¾ŃŠ±Š°ŃŠµŠ², M. A. Lobaev, A. B. Muchnikov |
| Institutions | London Centre for Nanotechnology, Institute for Physics of Microstructures |
| Citations | 40 |
Abstract
Section titled āAbstractāDiamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ādelta dopedā layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm 2 /Vs and sheet carrier concentrations to 6 Ć 10 13 cm -2 , thus enabling a new class of active diamond electronic devices. (Ā© 2016 WILEYāVCH Verlag GmbH &Co. KGaA, Weinheim)