Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-01-23 |
| Journal | Journal of the American Ceramic Society |
| Authors | Arkadeep Kumar, Shreyes N. Melkote, Steffi Kaminski, Chris Arcona |
| Institutions | Georgia Institute of Technology, Saint-Gobain (United States) |
| Citations | 62 |
Abstract
Section titled âAbstractâAbstract Fundamental understanding of the fixed abrasive slicing of photovoltaic silicon wafers is crucial for producing lowâcost wafers with superior surface quality and mechanical strength. With the goal of understanding the diamond wire sawing process, this paper investigates the scribing of monoâ and multiâcrystalline silicon by the abrasive grits on an actual diamond wire. Specifically, the effects of grit shape and silicon crystal structure on the resulting surface morphology, subsurface damage, and the critical depth of cut at which ductileâtoâbrittle transition occurs are investigated. Results show that surface cracking depends on the grit shape. Scribing across the grain and twin boundaries in multiâcrystalline silicon impacts the resulting surface morphology, with grit shape producing a greater effect than crystallographic orientation in the grain interior relative to the grain boundary. Subsurface damage depends on the grit shape and crystal structure. Differences in the critical depth of cut for ductileâtoâbrittle transition in scribing of monoâcrystalline silicon are explained via analysis of the stress state produced by idealized grit shapes.