Large area heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-01-01 |
| Journal | idUS (Universidad de Sevilla) |
| Authors | Andy Taylor, Petr Ashcheulov, Zuzana Vlčková Živcová, Monika Remzová, Jaromı́r Kopeček |
Abstract
Section titled “Abstract”Diamond is a unique semiconductor with a wide bandgap which usually is easily doped with boron and is acknowledged as one of the best materials for electrochemical \napplications. Heavily boron doped, high quality single crystal synthetic diamond can reach electrical conductivity as high as 103 S.cm, whereas polycrystalline material usually reaches c.a. 102 S.cm. \nHowever, many potential applications are restricted by the deposition temperature and limited coating area of conventional MW PECVD systems. Deposition of boron doped nano-crystalline diamond \n(BNCD) layers using a microwave PECVD system with linear antenna delivery (MW-LA-PECVD), enabling large area coating, was first reported in 2014 [1]. However, layers showed lower electrical \nconductivity in comparison to BNCD layers deposited using conventional PECVD systems. In addition, deposition of BNCD by MW-LA-PECVD is complicated by the necessity for the addition of oxygen \nspecies, which are known to limit boron incorporation and the competitive growth of silicon carbide at low CO2 concentrations [2, 3]. In this work, we further study the effect of deposition conditions on \nthe synthesis of BNCD using the MW-LA-PECVD technique. In order to produce highly conductive BNCD with a low sp2 fraction, we have investigated in greater detail the effect of deposition temperature, \nfrom 250 °C up to 750 °C, using temperature controlled substrate stages and the effect of precursor gas compositions.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”- DOI: None