THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-01-01 |
| Journal | Digital Repository (National Repository of Grey Literature) |
| Authors | JiÅĆ StuchlĆk, Š. Š. ŠŠ¾Š»Š¾Š“ŠøŠ½, A. A. Shklyaev, Martin LedinskĆ½, Jan ÄermĆ”k |
| Institutions | Czech Technical University in Prague, Czech Academy of Sciences |
Abstract
Section titled āAbstractāWe reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 degrees C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal Sourceā- DOI: None