Fabrication of p-Type ZnO -N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-02-27 |
| Journal | Materials |
| Authors | Yuping Jin, Nuannuan Zhang, Bin Zhang |
| Institutions | Institute of Modern Physics, Fudan University |
| Citations | 11 |
Abstract
Section titled āAbstractāThe oxygen vacancy (VO) is known as the main compensation center in p-type ZnO, which leads to the difficulty of fabricating high-quality p-type ZnO. To reduce the oxygen vacancies, we oxidized Zn3N2 films in oxygen plasma and successfully prepared p-type ZnO:N films at temperatures ranging from room temperature to 300 Ā°C. The films were characterized by X-ray diffraction (XRD), non-Rutherford backscattering (non-RBS) spectroscopy, X-ray photoelectron spectroscopy, photoluminescence spectrum, and Hall Effect. The results show that the nitrogen atoms successfully substitute the oxygen sites in the ZnO:N films. The film prepared at room temperature exhibits the highest hole concentration of 6.22 Ć 1018 cmā3, and the lowest resistivity of 39.47 Ī©ācm. In all ZnO:N films, the VO defects are reduced significantly. At 200 Ā°C, the film holds the lowest value of VO defects and the strongest UV emission. These results imply that oxygen plasma is very efficient in reducing VO defects in p-type ZnO:N films, and could greatly reduce the reaction temperature. This method is significant for the development of ZnO-based optoelectronic devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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