MHz rate X-Ray imaging with GaAs -Cr sensors using the LPD detector system
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-02-22 |
| Journal | Journal of Instrumentation |
| Authors | Matthew C. Veale, P. Booker, B. D. Cline, J. A. Coughlan, M. Hart |
| Institutions | National Research Tomsk State University, Rutherford Appleton Laboratory |
| Citations | 8 |
Abstract
Section titled âAbstractâThe STFC Rutherford Appleton Laboratory (U.K.) and Tomsk State University (Russia) have been working together to develop and characterise detector systems based on chromium-compensated gallium arsenide (GaAs:Cr) semiconductor material for high frame rate X-ray imaging. Previous work has demonstrated the spectroscopic performance of the material and its resistance to damage induced by high fluxes of X-rays. In this paper, recent results from experiments at the Diamond Light Source Synchrotron have demonstrated X-ray imaging with GaAs:Cr sensors at a frame rate of 3.7 MHz using the Large Pixel Detector (LPD) ASIC, developed by STFC for the European XFEL. Measurements have been made using a monochromatic 20 keV X-ray beam delivered in a single hybrid pulse with an instantenous flux of up to âź 1 Ă 1010 photons sâ1 mmâ2. The response of 500 Îźm GaAs:Cr sensors is compared to that of the standard 500 Îźm thick LPD Si sensors.