Superlight and Superflexible Three‐Dimensional Semiconductor Frameworks A(X≡Y)4 (A=Si, Ge; X/Y=C, B, N) with Tunable Optoelectronic and Mechanical Properties from First‐Principles
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-02-17 |
| Journal | Chemistry - An Asian Journal |
| Authors | Xinrui Cao, Xiaofei Li, Zi‐Zhong Zhu |
| Institutions | University of Electronic Science and Technology of China, Xiamen University |
| Citations | 3 |
Abstract
Section titled “Abstract”Abstract Silicon carbide materials, as leading wide band gap semiconductors, hold significant importance in semiconductor technologies. Herein, diamond‐like 3D materials with low density, but high elasticity properties, have been designed from first‐principles calculations. They are porous single‐crystalline materials composed of sp 3 ‐hybridized silicon (or germanium) and sp‐type C≡C (or B≡N) linear moieties; their stabilities are comparable to those of recently prepared SiC 4 materials. Moreover, such wide band gap semiconductors have strong absorption over a wide UV range and exhibit superlight, superflexible, and incompressible mechanical properties, and their optoelectronic and mechanical properties can be well tuned through structural modifications. Such features provide high potential for practicable application under extreme conditions, and suggest promising applications for the design of UV optoelectronic devices.