Silicon-vacancy center in plasmonic nanoresonators (Conference Presentation)
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-04-28 |
| Authors | I-Chun Huang, Srujan Meesala, Cleaven Chia, Jeffrey Holzgrafe, Marko LonÄar |
| Institutions | Harvard University Press, University of Cambridge |
Abstract
Section titled āAbstractāIn recent years, silicon-vacancy (SiV-) center has gained significant attention due to its outstanding properties: strong zero-phonon line (ZPL) emission (~70%), robustness to the fabrication process, nearly lifetime limited optical linewidths, and lifetime-comparable spectral diffusions in nano-structures. Metallic nano-resonator can strongly enhance the spontaneous decay rate and pumping intensity, which is suitable for enhancing single photon emission. In this work, we use circular and bow-tie apertures to engineer the emission of SiV- centers. Simulations show that the Purcell enhancements for circular aperture with diameter of 110 nm and for bowtie aperture with 20 nm gap are ~15 and ~90, respectively. We used e-beam lithography followed by reactive ion etching (RIE) to create diamond pillars with embedded SiV- centers. Next, gold was deposited using e-beam evaporation followed by 650Ā°C annealing for 7 minutes. Finally, sonication and lift-off were performed to get clean diamond gold apertures. Preliminary measurements show that SiV- centers inside circular apertures can have lifetime as short as 0.2 ns, which represents a ~9-fold reduction over a ~1.8 ns value typical for SiV- in bulk diamond. Given that the non-radiative relaxation might be large in SiV- center, the actual Purcell enhancement should be larger than 9. Interestingly, SiV- transitions inside apertures span a relatively wide wavelength range (10 nm) compared to that of bulk (< 1 nm), likely caused by large local strain introduced by our fabrication process.