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An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor

MetadataDetails
Publication Date2017-05-05
JournalSensors
AuthorsYukihiro Shintani, Mikinori Kobayashi, Hiroshi Kawarada
InstitutionsWaseda University, Yokogawa Electric (Japan)
Citations8

A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2-10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

  1. 1970 - Development of an ion-sensitive solid-state device for neurophysiological measurements [Crossref]
  2. 2001 - Study of the pH-ISFET and EnFET for Biosensor Applications
  3. 1997 - Diamond-like carbon-gate pH-ISFET [Crossref]
  4. 2001 - Electrolyte-solution- gate FETs using diamond surface for biocompatible ion sensors [Crossref]
  5. 2012 - Boron Ī“-doped (111) diamond solution gate field-effect transistors [Crossref]
  6. 2012 - Growth and electrical characterisation of Ī“-doped boron layers on (111) diamond surfaces [Crossref]
  7. 2010 - Low drift and small hysteresis characteristics of diamond electrolyte-solution-gate FET [Crossref]
  8. 2016 - Polycrystalline boron-doped diamond with an oxygen-terminated surface channel as an electrolyte-solution-gate field-effect transistor for pH sensing [Crossref]