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6CCVD Research

Field emission properties of ring-shaped Si ridges with DLC coating

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2017-05-30
JournalProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
AuthorsChristian Prommesberger, Robert Ławrowski, Christoph Langer, Mirgen Mecani, Yifeng Huang
InstitutionsOTH Regensburg, Sun Yat-sen University

Abstract

Section titled “Abstract”

We report on the fabrication and the emission characterization of single ring-shaped Si ridges with a coating of diamond-like carbon (DLC). The reactive ion etching and the subsequent inductively coupled plasma step were adjusted to realize ring-shaped Si ridges with a height of 7.5 μm respectively 15 μm and an apex radius of 20 - 25 nm. The samples were coated with a DLC layer (thickness ≈ 2 - 5 nm) by a filtered cathodic vacuum arc deposition system in order to lower the work function of the emitter and to improve the field emission characteristics. The field emission characterizations were done in diode configuration with cathode and anode separated by a 50 μm thick mica spacer. A higher emission current was carried out for the ring-shaped Si ridge in comparison to the point-shaped Si tips due to the increased emission area. The highest emission current of 0.22 μA at 1000 V was measured on a DLC-coated sample with the highest aspect ratio. No degradation of the emission current was observed in the plateau regime during a measurement period of 6 h. Finally, no decreasing performance of the field emission properties was found due to changes in the geometry or destructions.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2016 - Field emission from black silicon structures with integrated gate electrode
  2. 2016 - Gated p-Si field emission cathode applied in an ionization vacuum gauge
  3. 2015 - Stability investigation of high aspect ratio n-type silicon field emitter arrays
  4. 2012 - Theorectical investigations into the field enhancement factor of silicon structures
  5. 2014 - High aspect ratio silicon tip cathodes for application in field emission electron sources

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