Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-05-23 |
| Journal | Japanese Journal of Applied Physics |
| Authors | DongâWon Kang, Hae Nyung Chang, Min-Woo Ha |
| Institutions | Myongji University, Cheongju University |
| Citations | 4 |
Abstract
Section titled âAbstractâP-type diamond devices have high potential for power semiconductors due to their high critical field, hole mobility, and thermal conductivity. The electrical characteristics of p-type pseudovertical diamond Schottky barrier diodes (SBDs) were investigated by numerical simulation. The impact ionization coefficients were required to obtain the breakdown voltage. They were revised to satisfy a parallel-plane breakdown field of 10 MV/cm. The doping concentration and thickness of a low-doped drift layer were key parameters in determining the parallel-plane breakdown voltage. The p-type pseudovertical diamond SBDs exhibited lower breakdown voltage than the parallel-plane breakdown voltage because field crowding occurred at the edge of the cathode. When the doping concentration and thickness of the pâ drift layer were 1016 cmâ3 and 4 ”m, respectively, the breakdown voltage of the p-type pseudovertical diamond SBD was 961 V, which was considerably less than the parallel-plane breakdown voltage of 3646 V.