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6CCVD Research

High Quality and Thin Silicon Wafer for Next Generation Solar Cells

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2017-06-01
Journal2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
AuthorsYoshio Ohshita, Takuto Kojima, Ryota Suzuki, Kosuke Kinoshita, Tomoyuki Kawatsu
InstitutionsToyota Technological Institute, Komatsu (Japan)
Citations1

Abstract

Section titled ā€œAbstractā€

The high quality and thin Si wafer technology for the future higher conversion efficiency and lower cost crystalline silicon solar cells are realized. The high minority carrier lifetimes even after the processes are obtained by controlling the Czochralski growth condition, which prevents the interstitial oxygen segregation enhanced by the substitutional carbon. The Cz ingot is sliced by the advanced diamond multi-wire saw technology and the thin wafers with relatively thin damaged layer and 100Ī¼m kerf-loss are realized. The thin wafer with low kerfloss decreases the wafer cost and improve the cell performance. The thin wafer solar cells are fabricated using the PERC processes, and these technologies are evaluated from the view point of photovoltaic.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2008 - On the Impact of Partial Shading on PV Output Power

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