State equations and properties of various polymorphous modifications of silicon and germanium
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-06-01 |
| Journal | Physics of the Solid State |
| Authors | Š. Š. ŠŠ°Š³Š¾Š¼ŠµŠ“Š¾Š² |
| Institutions | Dagestan Scientific Center of the Russian Academy of Sciences |
| Citations | 26 |
Abstract
Section titled āAbstractāThe state equations and the pressure dependences of the lattice properties have been obtained for various polymorphous modifications of silicon and germanium using the Mie-Lennard-Jones pair interatomic potential and the Einstein crystal model. It is shown that the elastic-type interatomic potential gives the best results for the semiconductor phase and the plastic-type interatomic potential for the metalized phases whose potential well depth is significantly smaller. The pressure dependences of the lattice properties are calculated along isotherm 300 K and the jumps of the properties during the phase transition from the diamond structure to the Ī²-Sn phase are evaluated for both silicon and germanium. The calculated results agree well with the experimental data.