The study of P-type and N-type diamond crystals synthesis by hot filament chemical vapor deposition
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-06-01 |
| Authors | Piyachat Sodngam, Surasak Niemcharoen, Wisut Titiroongraung, Vilailuck Siriwongrungson |
| Institutions | King Mongkut’s University of Technology North Bangkok, King Mongkut’s Institute of Technology Ladkrabang |
Abstract
Section titled “Abstract”This research proposes the hot filament chemical vapor deposition (HFCVD) for synthesis of p-type and n-type diamond by doping of boron trioxide (B <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> ) and phosphorous pentoxide (P <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>5</sub> ) in ethyl alcohol (C <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> H <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>5</sub> OH), respectively. The synthesis was conducted for 180 h with annealing under hydrogen atmosphere every 60 h to improve the quality of the diamond. Composition of the synthetic diamond was analyzed using energy-dispersive x-ray spectroscopy (EDX). The main composition of the synthetic diamond is boron and carbon, and phosphorous and carbon for boron-doped and phosphorous doped synthetic diamond crystal, respectively. The crystal size and physical characteristics were analyzed using scanning electron microscopy (SEM). The synthetic diamond as large as 1.56 mm and 1.63 mm was synthesized. In addition, the synthetic diamond was confirmed to be diamond using Raman spectroscopy. The peak at Raman shift of 1332 cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-1</sup> that is the same as the natural diamond was observed. Moreover, electrical properties of the synthetic diamond were compared with intrinsic diamond at similar crystal size. The conductivity of the boron-doped synthetic diamond shown positive side (p-type) and phosphorous-doped synthetic diamond shown negative side (n-type) from the measurement using hot probe. The resistance of the synthetic doped with B <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> and P <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>5</sub> is 5.711 kΩ and 4.570 kΩ, respectively from the measurement using Circuit applied for current and voltage measurement. The resistances measured are significantly lower than intrinsic diamond. Therefore, it can be implied that the conductivity of the synthetic diamond is better than intrinsic diamond.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 0 - SYNTHETIC OF LARGE DIAMOND CRYSTALS BY HFCVD Junction Application
- 2015 - Hall effect
- 2017 - Piyachat Sodngam Development of Large Diamond Synthesis by Double Test Tubes Hot Filament Chemical Vapor Deposition