MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-08-15 |
| Journal | physica status solidi (a) |
| Authors | Fernando Lloret, M. GutiĂ©rrez, D. AraĂșjo, David Eon, E. Bustarret |
| Institutions | Institut NĂ©el, Centre National de la Recherche Scientifique |
| Citations | 8 |
Abstract
Section titled âAbstractâDiamond lateral growth is a useful technique to assess 3D architectures of devices. The requirement of the overgrowth on etched substrates has been observed to have additional benefit in the crystallinity of the diamond. The surface roughness is enhanced and threading dislocation density is reduced as a consequence of the lateral growth on patterned substrates. Under these premises, this contribution presents a study of defects and terrace coalescences for the lateral growth on a trenched surface substrates with different trench widths. The latter was achieved on 100âoriented HPHT diamond substrates grown by MPCVD and using very thinâdoped layers to mark the growth plane every 100 nm. The results showed high density of threading dislocations that were gathered to the centre of the coalescence. These threading dislocations, as well as planar defects, were investigated using transmission electron microscopy. The mechanism of those defects generation and the better conditions to achieve defectâfree areas are discussed.