SRT research of the crystal defects on the TGT synthesized diamond doped with boron and phosphorus
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-01-01 |
| Journal | IOP Conference Series Materials Science and Engineering |
| Authors | Wan Li Yu, Xiaopeng Jia, Qingxi Yuan, Wanxia Huang |
| Institutions | Jilin University, Institute of High Energy Physics |
Abstract
Section titled āAbstractāCrystal defects of two synthesized diamonds doped with boron and phosphorus are compared by synchrotron radiation topography (SRT). The crystal defects in the specimen are mainly dislocations. The dislocations are assembled in bundles in the cone-shape and distributed in the directions approximately towards to <112> and <111>. The Burgers vectors of most of the dislocations are parallel to [202] and oblique to the dislocations, showing that the dislocations are of mixed type. The features of the crystal defects are quite different in several aspects compared with the diamonds without phosphorous doping. The ionic radius of phosphorous is 118.75 percent larger than that of carbon and intensive distortion may occur near the phosphorous ions. The dislocations thus originated in bundles to release the stress caused by the phosphorous doping.