Synthesis of multiple single crystal diamonds by DC-GD-CVD
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-03-14 |
| Journal | Surface Engineering |
| Authors | Jilei Lyu, Shaolong Wang, Bo Wang, Kazhihito Nishimura, Nan Jiang |
| Institutions | Kogakuin University, Ningbo Institute of Industrial Technology |
| Citations | 8 |
Abstract
Section titled āAbstractāMultiple single crystal diamonds (SCDs) were first synthesised on 24 high pressure high temperature (HPHT) synthetic type Ib (100) SCD seeds by direct current glow discharge plasma chemical vapour deposition (DC-GD-CVD) system with gas mixture of CH 4 -H 2 -Ar. Owing to the increase of the formed plasma density and temperature caused by the addition of 1.2 vol.-% Ar gas, a high growth rate of 22.2 Āµm h ā1 for diamonds deposition was achieved by the plasma with diameter of 2 inches at 900-950Ā°C. After deposition for 50 h, diamond material with a thickness of about 1 mm was uniformly deposited on each seed. The average FWHM value, hardness and transmittance of as-obtained SCDs were 3.2 cm ā1 , 105 GPa and 69.4%, revealing the high quality of multiple SCDs fabricated by the DC-GD-CVD method.