Three-dimensional atomic arrangement around active/inactive dopant sites in boron-doped diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-05-21 |
| Journal | Applied Physics Express |
| Authors | Y. Kato, Daichi Tsujikawa, Yusuke Hashimoto, Taisuke Yoshida, Shun Fukami |
| Institutions | Nara Institute of Science and Technology, National Institute of Advanced Industrial Science and Technology |
| Citations | 9 |
Abstract
Section titled āAbstractāBoron-doped diamond has received significant attention as an advanced material for power devices owing to its high breakdown characteristics. To control the characteristics of diamond related to band conduction, it is essential to determine the atomic structure around dopants and to develop a method of controlling the atomic arrangement around dopants. We measured the photoelectron diffraction of a boron-doped diamond using a display-type ellipsoidal mesh analyzer to examine the dopant sites in heavily boron-doped diamond. The B 1s photoelectron spectrum shows two peaks for different chemical bonding sites. These two dopant sites were identified as the substitutional and interstitial sites in diamond.