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Development of Highly-Sensitive Transient Photocapacitance Mesurement System for Deep Defects in Boron-Doped Diamond (100) Films

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2018-06-01
AuthorsKenta Miyawaki, Ryosuke Yamashita, Taishi Kodama, Osamu Maida
InstitutionsThe University of Osaka

Abstract

Section titled ā€œAbstractā€

We have developed a highly-sensitive transient photocapacitance measurement system for deep defects in wide bandgap materials, and applied it to characterize the boron-doped diamond films grown on a high-pressure/high-temperature-synthesized Ib diamond substrate using high-power-density microwave-plasma chemical vapor deposition method. The developed transient photocapacitance measurement system has both a low detection limit of less than 0.5 fF for changes in the photocapacitance and a low measurement temperature drift of less than 0.03 K in 12 h. By using the transient photocapacitance measurement system, we have successfully found an acceptor-type defect around 1.2 eV above the valence band maximum for the B-doped diamond film.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2003 - Exceptionally high voltage Schottky diamond diodes and low boron doping [Crossref]
  2. 1963 - Intrinsic edge absorption in diamond

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