Characterization and Modeling of Hydrogen-Terminated MOSFETs With Single-Crystal and Polycrystalline Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-09-17 |
| Journal | IEEE Electron Device Letters |
| Authors | Yu Fu, Ruimin Xu, Yuehang Xu, Jianjun Zhou, Qingzhi Wu |
| Institutions | University of Electronic Science and Technology of China |
| Citations | 21 |
Abstract
Section titled āAbstractāThe mechanism of hydrogen-terminated (H-terminated) single-crystal and polycrystalline diamond metal-oxide field-effect transistors (MOSFETs) is investigated in this letter. In order to characterize the complicated p-type surface layer in H-terminated diamond MOSFETs, both p-type acceptors and the C-H dipole effect are considered in our model. Simulated hole distribution and band bending are used to illustrate the operation mechanism in the surface region. Simulated results by using the proposed model match well with both measured I-V and transfer characteristics of these two kinds of diamond MOSFETs. Moreover, channel lattice temperature distribution reveals that self-heating effect-induced slight current collapse occurs in the polycrystalline diamond MOSFET at I <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>ds</sub> over 500 mA/mm due to relatively lower thermal conductivity. Finally, the lateral electric field and hole velocity distribution under the gate electrode are given to aid future research.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2013 - Simulation of DC characteristics of nano-scale hydrogen-terminated diamond MISFETs [Crossref]
- 2017 - Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation [Crossref]