High Thermal Conductivity in Isotopically Enriched Cubic Boron Phosphide
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-09-05 |
| Journal | Advanced Functional Materials |
| Authors | Qiye Zheng, Sheng Li, Chunhua Li, Yinchuan Lv, Xiaoyuan Liu |
| Institutions | The University of Texas at Dallas, University of Illinois Urbana-Champaign |
| Citations | 92 |
Abstract
Section titled āAbstractāAbstract Zinc blende boron arsenide (BAs), boron phosphide (BP), and boron nitride (BN) have attracted significant interest in recent years due to their high thermal conductivity ( Ī ) predicted by firstāprinciples calculations. This research reports the study of the temperature dependence of Ī (120 K < T < 600 K) for natural isotopeāabundance BP and isotopically enriched 11 BP crystals grown from modified flux reactions. Timeādomain thermoreflectance is used to measure Ī of subāmillimeterāsized crystals. At room temperature, Ī for BP and 11 BP is 490 and 540 W m ā1 K ā1 , respectively, surpassing the values of conventional high Ī materials such as Ag, Cu, BeO, and SiC. The Ī of BP is smaller than only cubic BN, diamond, graphite, and BAs among singleāphase materials. The measured Ī for BP and 11 BP is in good agreement with the firstāprinciples calculations above 250 K. The quality of the crystals is verified by Raman spectroscopy, Xāray diffraction, and scanning transmission electron microscopy. By combining the firstāprinciples calculations and Raman measurements, a previously misinterpreted Raman mode is reassigned. Thus, BP is a promising material not only for heat spreader applications in highāpower microelectronic devices but also as an electronic material for use in harsh environments.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2012 - Cooling of Electronic Systems