Ab Initio Spin-Strain Coupling Parameters of Divacancy Qubits in Silicon Carbide
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2018-11-05 |
| Journal | Physical Review Applied |
| Authors | PĂ©ter Udvarhelyi, Adam Gali, PĂ©ter Udvarhelyi, Adam Gali |
| Institutions | Budapest University of Technology and Economics, Wigner Research Centre for Physics |
| Citations | 31 |
Abstract
Section titled âAbstractâCubic silicon carbide is an excellent platform for integration of defect\nqubits into established wafer scale device architectures for quantum\ninformation and sensing applications, where divacancy qubit, that is similar to\nthe negatively charged nitrogen-vacancy (NV) center in diamond, has favorable\ncoherence properties. We demonstrate by means of density functional theory\ncalculations that divacancy in 3C SiC has superior spin-stress coupling\nparameters and stress sensitivity for nanoscale, quantum enhanced photonic,\noptoelectronic and optomechanical devices.\n