Influence of Surface Orientation on Electrochemical Properties of Boron-Doped Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-02-14 |
| Journal | The Journal of Physical Chemistry C |
| Authors | Tribidasari A. Ivandini, Takeshi Watanabe, Takahiro Matsui, Yusuke Ootani, Shota Iizuka |
| Institutions | Aoyama Gakuin University, University of Indonesia |
| Citations | 67 |
Abstract
Section titled āAbstractāTo study the influence of crystal orientation on the electrochemical properties of boron-doped diamond (BDD), electrodes comprising (100) and (111) homoepitaxial single-crystal layers of BDD were investigated and these were compared with a thin polycrystalline BDD electrode. The BDD samples with similar amounts of boron of around 1020 cm-3 and resistivity of around 6 Ć 10-3 Ī© cm were prepared. Evaluation of the electrochemical reactivity of each of the samples with both H- and O-terminated surfaces showed that polycrystalline BDD was the most reactive, whereas the (111) samples proved to be more reactive than the (100) ones for single-crystal BDD. Moreover, considering the results of first-principles molecular dynamics simulations, it is proposed that surface transfer doping is the dominating factor for H-terminated surfaces, whereas the degree of band bending and the thickness of the space-charge layer are the dominating factors for O-terminated surfaces.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2005 - Diamond Electrochemistry