Phosphorus-doped (113) CVD diamond - A breakthrough towards bipolar diamond devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-03-18 |
| Journal | Applied Physics Letters |
| Authors | M.A. Pinault-Thaury, Solange Temgoua, RĆ©mi Gillet, H. Bensalah, Ingrid Stenger |
| Institutions | Centre National de la Recherche Scientifique, Groupe dāĆtude de la MatiĆØre CondensĆ©e |
| Citations | 46 |
Abstract
Section titled āAbstractāAmong wide bandgap semiconductors, diamond presents physical properties particularly suited for high performance power electronic devices. Growth and doping of chemical vapor deposited (CVD) diamond have been mainly optimized in the conventional (100) crystal orientation, highly studied on (111) surfaces and recently initiated on (113). This last orientation seems very promising, as is shown for intrinsic and p-type doped diamonds. In this work, we report the growth of CVD phosphorus doped diamond films on (113)-oriented substrates. The (113) homoepitaxial layers present a phosphorus content in the range of 7.2 Ć 1016 up to 4.5 Ć 1019 at/cm3 for thicknesses between 0.6 Ī¼m and 4 Ī¼m. The high quality and the full incorporation of phosphorus into donor sites found for the (113) crystal orientation open new architecture possibilities for bipolar diamond devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2016 - Single crystal diamond wafers for high power electronics [Crossref]