Radiative lifetime of boron-bound excitons in diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-04-01 |
| Journal | Applied Physics Letters |
| Authors | Yoshiki Kubo, Solange Temgoua, Riadh Issaoui, Julien Barjon, N. Naka |
| Institutions | Centre National de la Recherche Scientifique, Groupe d’Étude de la Matière Condensée |
| Citations | 8 |
Abstract
Section titled “Abstract”We report the ultraviolet absorption of boron-bound excitons at low temperature in a single crystal of diamond grown by chemical vapor deposition. The no-phonon (NP) and phonon-assisted lines are identified by comparison with cathodoluminescence. The oscillator strength of the NP lines was found to be 3.0 × 10−5 based on the measured absorption cross-section. This value is discussed in terms of the scaling law known for doped silicon, where the oscillator strength varies proportionally to Eloc2.5, with Eloc being the localization energy of excitons on acceptors. More importantly, we also could assess the oscillator strength of the dominant transverse optical phonon-assisted transition, which is found to be equal to 1.2×10−3. The associated radiative lifetime for the boron-bound exciton is 1.8 μs, which is much longer than the non-radiative Auger lifetime that governs its decay.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 1994 - Properties and Growth of Diamond