Investigation on Electrical Properties of Hydrogen Doped Sputtered Boron Carbon Nitride Thin Films
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-05-01 |
| Journal | ECS Meeting Abstracts |
| Authors | Shraddha Dhanraj Nehate, Kalpathy B. Sundaram |
| Institutions | University of Central Florida |
| Citations | 1 |
Abstract
Section titled āAbstractāInterlayer dielectric materials (ILD) play a crucial role of isolating electrically conductive and semiconducting features on the devices [1]. Due to constant scaling down of device dimensions, the interconnect delay (Ļ = R x C) can be reduced by decreasing resistance of conductor and capacitance of ILD. Reduced capacitance can be achieved by high quality insulating film with low dielectric constant. Boron carbon nitride (BCN) films have achieved attention due to their complicated crystalline structure and unique properties. Atomic bonding similarities amongst boron, carbon and nitrogen allow formation of compounds with wide compositional range. BCN compounds are expected to combine the excellent properties of diamond, B 4 C and BN with their properties adaptable depending on their composition and structure [2, 3]. In this study, electrical properties of hydrogen doped BCN thin films will be investigated. BCN films are sputtered by B 4 C and BN targets. Films are deposited at different temperatures in presence of hydrogen/argon to investigate the influence of temperature and hydrogen gas on the electrical properties of BCN thin films. References [1] S. P. Muraka, M. Eizenberg, and A. K. Sinha, Interlayer dielectrics for semiconductor technologies vol. 1: Elsevier, 2003. [2] A. Prakash and K. B. Sundaram, āStudies on electrical properties of RF sputtered deposited boron carbon nitride thin films,ā ECS Journal of Solid State Science and Technology, vol. 4, pp. N25-N29, 2015. [3] M. K. Mazumder, R. Moriyama, D. Watanabe, C. Kimura, H. Aoki, and T. Sugino, āAg diffusion in low-k materials (BCN and SiOC) and its challenges for future interconnection,ā Japanese journal of applied physics, vol. 46, p. 2006, 2007.