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6CCVD Research

Lattice location study of low-fluence ion-implanted 124In in 3C-SiC

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2019-06-05
JournalJournal of Applied Physics
AuthorsÂngelo Costa, U. Wahl, J. G. Correia, E. David-Bosne, V. Augustyns
InstitutionsUniversidade do Porto, University of Lisbon
Citations1

Abstract

Section titled “Abstract”

We report on the lattice location of low-fluence ion implanted 124In in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4 × 1012 cm−2, 60(9)% of the In atoms were found slightly displaced (0.12-0.20 Å) from substitutional Si sites, with the remainder occupying sites of low crystallographic symmetry, the so-called random sites. For 800 °C implantation, the substitutional In fraction increased to 72(8)% and the displacements from ideal substitutional Si sites were reduced to those expected for the lattice vibrations. These results, in terms of lattice location and disorder, are compared to those on In implanted group IV semiconductors silicon and diamond.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
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