Study on Processing Process of SiC Single Crystal Cut with Wire Saw Excited by Ultrasonic
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-10-01 |
| Journal | 2019 4th International Conference on Mechanical, Control and Computer Engineering (ICMCCE) |
| Authors | Lun Li, Shaodong Yang, Bofeng Du, Shiyu Xu, Jishun Li |
| Institutions | Henan University of Science and Technology |
| Citations | 3 |
Abstract
Section titled āAbstractāOwing to high hardness and brittleness, SiC single crystal is the typical difficult-to-machine material. The SiC single crystal workpiece was cut by wire saw excited by transverse ultrasonic, and the cutting process was analyzed in current research. The kinematics equation of ultrasonic excitation wire saw and ordinary wire saw were established, and two different kinematics characteristics were analyzed respectively. The trajectory of abrasive particles in two cutting mode changed fundamentally. The finite element simulation model of single diamond abrasive cutting SiC single crystal was established. The influence of processing parameters on sawing force, surface morphology of SiC single crystal cut with abrasive excited by ultrasonic and ordinary diamond abrasive cutting was analyzed. The results show that sawing force of diamond abrasive excited by ultrasonic is much less than that of ordinary diamond abrasive cutting and the surface morphology is fairly flat. The cutting depth of abrasive has a significant influence on the sawing force and wafer surface.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2016 - Finite element analysis on wafer micro-crack damage depth of SiC crystal in wire saw slicing process[J]
- 2010 - Research on cutting force of ultrasonic diamond wire saw[J]