Defect-induced exciton localization in bulk gallium nitride from many-body perturbation theory
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-11-21 |
| Journal | Physical Review Materials |
| Authors | D. Kirk Lewis, Sahar Sharifzadeh |
| Institutions | Boston University |
| Citations | 13 |
Abstract
Section titled āAbstractāWe present a many-body perturbation theory study of the excitonic properties of wurtzite GaN containing a single charged nitrogen vacancy. We determine that the lowest-energy exciton consists of a bulk to defect transition, resulting in a slight redshift (<0.1 eV) of the optical absorption onset and a 50 meV increase in the exciton binding energy when compared with pristine bulk. Furthermore, by analysis of the electron-hole correlation function, we quantify the defect-induced localization of the Wannier-Mott exciton in two ways. First, we show that the electron-hole separation is reduced, and that the exciton envelope wave function can be related to a simple model of a defect-bound exciton. Second, we show that the exciton center-of-mass does not display the periodicity of the lattice due to defect-induced localization. We anticipate that our approach, which quantitatively describes the influence of a point defect on the exciton wave function, will be generally applicable.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2009 - Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion [Crossref]
- 2017 - Semicond. Semimetals
- 2015 - Point Defects in Silicon Carbide [Crossref]