Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-12-23 |
| Journal | Materials |
| Authors | Xiwei Wang, Peng Duan, Zhenzhong Cao, Changjiang Liu, Dufu Wang |
| Institutions | State Key Laboratory of Crystal Materials, Jinan Institute of Quantum Technology |
| Citations | 17 |
Abstract
Section titled āAbstractāThe diamond mosaic grown on the single-crystal diamond substrates by the microwave plasma chemical vapor deposition (MPCVD) method has been studied. The average growth rate was about 16-17 Ī¼m/h during 48 hoursā growth. The surface morphologies of the as-grown diamond layer were observed. It was found that the step flow was able to move across the substrates and cover the junction interface. Raman spectroscopic mapping in the central area of the junction revealed the high stress region movement across the junction interface from one substrate to the other for about 200-400 Ī¼m. High-resolution X-ray diffractometry (HRXRD) results proved that the surface step flow movement direction had nothing to do with the off-axis directions of the original substrates. It was found that the surface height difference of substrate was the main driving force for the step flow movement, junction combination and surface morphology changing. The mechanism of the mosaic interface junction combination and step flow transformation on the mosaic surface was proposed.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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