High‐Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon‐Carbon Alloys and Boron‐Doped Diamond Thin Films
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-03-18 |
| Journal | physica status solidi (b) |
| Authors | The Ha Stuchlíková, Jiří Stuchlík, Z. Remeš, Andrew Taylor, V. Mortet |
| Institutions | Czech Academy of Sciences, Institute of Physics, Russian Academy of Sciences |
| Citations | 6 |
Abstract
Section titled “Abstract”Amorphous SiC:H (a‐SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron‐doped diamond‐coated fused silica substrates by plasma‐enhanced chemical vapor deposition. The boron‐doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin‐film structures based on P‐type, Intrinsic and N‐type a‐SiC:H thin films, shortly a‐SiC:H PIN diodes, are characterized by current-voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine‐doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature‐resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 1983 - Japan Annual Reviews in Electronics Computers and Telecommunications
- 2010 - Nanotechnology Book Series