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6CCVD Research

Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2020-03-01
JournalAIP Advances
AuthorsJibran Hussain, Haris Naeem Abbasi, Wei Wang, Yanfeng Wang, Ruozheng Wang
InstitutionsXi’an Jiaotong University
Citations5

Abstract

Section titled “Abstract”

The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with HfSiON/Al2O3 bilayer dielectric has been carried out. HfSiON and Al2O3 layers were deposited by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques. The maximum output current for SD-HfSiON/ALD-Al2O3 was 36 mA mm−1, and for ALD-Al2O3, it was 31 mA mm−1. We reported that the hysteresis shift voltage of the bilayer dielectric MOSFET was one fourth of the single dielectric layer MOSFET. The leakage current density of SD-HfSiON/ALD-Al2O3 was one order of magnitude lower than the single layer dielectric. We also determined the dielectric constants of HfSiON/Al2O3 and Al2O3 dielectrics based on capacitance-voltage characteristics. The values of VTH, on/off ratio, subthreshold swing, and low field mobility for the bilayer dielectric MOSFET were evaluated to be 4.5 V, 105, 296 mV/decade, and 154 cm2 V−1 s−1, respectively.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2017 - Deep-depletion mode boron-doped monocrystalline diamond metal oxide semiconductor field effect transistor [Crossref]
  2. 2015 - RF operation of hydrogen-terminated diamond field effect transistors: A comparative study [Crossref]
  3. 2017 - Logic circuits with hydrogenated diamond field-effect transistors [Crossref]
  4. 2016 - Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers [Crossref]
  5. 2014 - Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications [Crossref]
  6. 2018 - Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layerformed by thermal oxidation of Al [Crossref]
  7. 1988 - Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide [Crossref]
  8. 2017 - Ohmic contact between iridium film and hydrogen-terminated single crystal diamond [Crossref]
  9. 2013 - Metal oxide semiconductor structure using oxygen-terminated diamond [Crossref]
  10. 1995 - Pulse-doped diamond p-channel metal semiconductor field-effect-transistor [Crossref]

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