Tof-Sims Fragment Pattern Analysis Of Boron-Doped Chemical Vapour Deposition Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-03-30 |
| Journal | ĀThe ĀEuropean Proceedings of Social & Behavioural Sciences |
| Authors | K.G. Saw |
Abstract
Section titled āAbstractāChemical vapour deposition diamond has been used widely in optoelectronic applications such as sensors, detectors and electrodes. Boron doping is usually necessary for device applications to achieve p-type conductivity and can be done by adding various gases such as diborane (B2H6) or trimethyl borate (C3H9BO3) with the methane and hydrogen gas stream into the reactor. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is a suitable technique for surface analysis of incorporated light elements in the parts-per-billion (ppb) range. However, ToF-SIMS surface analysis based on the ion fragments can be problematic due to the difficulty of obtaining reference spectra for the materials that are analysed as well as the disadvantage of detecting fragments originating from unavoidable contaminants on the sample surface. In this work, we study the fragmentation patterns of as-received boron-doped CVD diamond to identify peaks originating from the boron-doped diamond. Fragment patterns are acquired using Bi1+ as the primary ion source and operated in the high current bunch mode from the IONTOF instrument. Elemental carbon fragments are believed to have originated from the diamond material. As a result of boron-doping, the positive spectrum shows the presence of B+, while the negative spectrum shows the BO- and BO2- molecular fragments. The SO3-, CxHy-, Cl-, CN-, CNO-, CxHyOz- fragments as well as CxHy+, CxHyOz+, NH4+ and Na+ fragments are attributed to atmospheric contaminants.