Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-04-01 |
| Authors | Yerragudi Pullaiah, Naresh Kumar Emani, Kaushik Nayak |
| Institutions | Indian Institute of Technology Hyderabad |
| Citations | 4 |
Abstract
Section titled āAbstractāThe oxygen-terminated bulk boron doped diamond MOSFET has been designed and simulated using coupled drift-diffusion transport-poisson solver within the TCAD analysis. The diamond MOS capacitor (MOSC) performance is dictated by accumulation, depletion, and deep depletion regimes of operation. We successfully calibrate the fitting parameters in the physical models such as doping and high-field limited carrier mobility, dopant ionization energies, and energy band gap dependence on temperature with experimental C- V and transfer characteristics. We show that the threshold voltage is sensitive to high temperatures. The device exhibits reasonably good ON to OFF current ratio of 10 <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>8</sup> -10 <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>4</sup> at wide temperature range from 300 K - 550 K. We also show that the device exhibits a breakdown voltage of -270 V with the chosen impact ionization coefficients.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2017 - Synopsys Manual
- 2000 - An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices [Crossref]