Effects of Co Doping on the Thermoelectric Properties of Cu<sub>3</sub>SbSe<sub>4</sub> at Moderate Temperature
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-05-01 |
| Journal | Materials science forum |
| Authors | Lin Bo, Wen Ying Wang, Yong Peng Wang, Lin Wang, Min Zuo |
| Institutions | University of Jinan |
| Citations | 3 |
Abstract
Section titled āAbstractāCu 3 SbSe 4 -based thermoelectric materials are a class of thermoelectric materials with diamond-like structure which exhibit high thermoelectric properties at moderate temperature region and have broad research prospects. In this study, the p -type Co-doped Cu 3-x Co x SbSe 4 (x=0-0.015) thermoelectric materials were fabricated by melting-annealing-ball milling-hot pressing process to investigate the effects of Co doping on the thermoelectric properties of Cu 3 SbSe 4 . It is found that the average power factor of Cu 2.995 Co 0.005 SbSe 4 was increased by 30% compared with the pure sample, indicating that Co doping had a great effect on the electrical properties of Cu 3 SbSe 4 . The energy gap of ternary p -type semiconductor Cu 3 SbSe 4 was around 0.27eV. As the Co content increasing, the lattice distortion enhanced the phonon scattering, which led to the decrease in lattice thermal conductivity. The maximum thermoelectric figure of merit, ZT max , reached 0.46 at 600K for the Cu 2.995 Co 0.005 SbSe 4 .