Pressure-Induced Superconductivity in Layered Transition-metal Chalcogenides (Zr,Hf)GeTe$_{4}$ Explored by Data-driven Approach
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2020-06-30 |
| Journal | arXiv (Cornell University) |
| Authors | Ryo Matsumoto, Zhufeng Hou, Shintaro Adachi, S. Yamamoto, Hiromi Tanaka |
Abstract
Section titled âAbstractâLayered transition-metal chalcogenides (Zr,Hf)GeTe${4}$ were screened out from database of Atomwork as a candidate for pressure-induced superconductivity due to their narrow band gap and high density of state near the Fermi level. The (Zr,Hf)GeTe${4}$ samples were synthesized in single crystal and then the compositional ratio, crystal structures, and valence states were investigated via energy dispersive spectrometry, single crystal X-ray diffraction, and X-ray photoelectron spectroscopy, respectively. The pressure-induced superconductivity in both crystals were first time reported by using a diamond anvil cell with a boron-doped diamond electrode and an undoped diamond insulating layer. The maximum superconducting transition temperatures of ZrGeTe${4}$ and HfGeTe${4}$ were 6.5 K under 57 GPa and 6.6 K under 60 GPa, respectively.